[大学院修士課程]
1975
1. S. Adachi and Y. Machi
   Energy level study of phosphorus-ion-implanted ZnSe
   Jpn. J. Appl. Phys. 14, pp. 1599-1600 (1975).

2. S. Adachi and Y. Machi
   Annealing effect on copper impurity emission in ZnSe
   Jpn. J. Appl. Phys. 14, pp. 2087-2088 (1975).

   1976

3. S. Adachi and Y. Machi
   Phosphorus-ion-implantation into ZnSe single crystals
   Jpn. J. Appl. Phys. 15, pp. 1513-1521 (1976).

   1978

4. S. Adachi and Y. Machi
   Boron- and fluorine-ion-implantation into ZnSe single crystals
   Jpn. J. Appl. Phys. 17, pp. 135-139 (1978).

5. S. Adachi and Y. Machi
   Anomalous enhancement of electron paramagnetic resonance signal of Mn²⁺ in N⁺-ion-implanted CdS
   Jpn. J. Appl. Phys. 17, pp. 229-230 (1978).

   
   [大学院博士課程]
   1977

6. S. Adachi and C. Hamaguchi
   Resonant Brillouin scattering in ZnTe
   J. Phys. Soc. Jpn 43, pp. 1637-1645 (1977).

   1978

7. S. Adachi and C. Hamaguchi
   Resonant Brillouin scattering in Zn_xCd_1-xTe solid solutions
   J. Phys. Soc. Jpn 44, pp. 343-344 (1978).

8. S. Adachi and C. Hamaguchi
   Resonant Brillouin scattering by mode converted TA phonons in CdS
   Phys. Lett. 66A, pp. 401-403 (1978).

9. S. Adachi and C. Hamaguchi
   Resonant Brillouin scattering in CdS by piezoelectrically inactive TA phonon domains
   J. Phys. Soc. Jpn 45, pp. 505-513 (1978).

   1979

10. S. Adachi and C. Hamaguchi
    Resonant Brillouin scattering in ZnSe
    Phys. Rev. B 19, pp. 938-946 (1979).

11. Y. Itoh, K. Yamabe, S. Adachi, and C. Hamaguchi
    Resonant Brillouin scattering by LA phonons in CdS
    J. Phys. Soc. Jpn 46, pp. 542-545 (1979).

12. S. Adachi, Y. Itoh, and C. Hamaguchi
    Effect of lifetime broadening on resonant Brillouin scattering in ZnTe and ZnSe
    Jpn. J. Appl. Phys. 18, pp. 575-580 (1979).

13. S. Adachi and C. Hamaguchi
    Resonant forbidden Brillouin scattering in CdS
    J. Phys. Soc. Jpn 46, pp. 1385-1386 (1979).

14. Y. Itoh, S. Adachi, and C. Hamaguchi
    Analysis of resonant Brillouin scattering in GaAs
    Phys. Status Solidi B 93, pp. 381-389 (1979).

15. S. Adachi, Y. Itoh, and C. Hamaguchi
    Quasi-static analysis of resonant Brillouin scattering in ZnSe, ZnTe, and CdS
    J. Phys. Soc. Jpn 46, pp. 1546-1553 (1979).

16. S. Adachi and C. Hamaguchi
    Resonant Brillouin scattering as form of modulation spectroscopy
    J. Phys. C 12, pp. 2917-2926 (1979).

17. S. Adachi and C. Hamaguchi
    Brillouin scattering by pure-transverse phonons in GaSe and GaS
    Solid State Commun. 31, pp. 245-248 (1979).

18. S. Adachi and C. Hamaguchi
    Resonant Brillouin scattering in GaP near the indirect absorption edge
    Physica B 97, pp. 187-193 (1979).

    1980

19. S. Adachi and C. Hamaguchi
    Piezobirefringence analysis in an opaque region
    Phys. Rev. B 21, pp. 1701-1705 (1980).

20. S. Adachi and C. Hamaguchi
    Resonant Brillouin scattering in GaSe and GaS
    J. Phys. Soc. Jpn 48, pp. 1981-1989 (1980).

    
    [日本電信電話公社 (現NTT) 電気通信研究所]
    1981

21. S. Adachi and H. Kawaguchi
    InGaAsP-InP planar-stripe lasers fabricated by wet chemical etching
    J. Appl. Phys. 52, pp. 3176-3178 (1981).

22. S. Adachi and H. Kawaguchi
    Chemical etching characteristics of (001)InP
    J. Electrochem. Soc. 128, pp. 1342-1349 (1981).

23. S. Adachi, H. Kawaguchi, and G. Iwane
    A new etchant system, K₂Cr₂O₇-H₂SO₄-HCl, for GaAs and InP
    J. Materials Sci. 16, pp. 2449-2456 (1981).

24. S. Adachi, H. Kawaguchi, K. Takahei, and Y. Noguchi
    InGaAsP/InP buried-heterostructure lasers (λ=1.5 mm ) with chemically etched mirrors
    J. Appl. Phys. 52, pp. 5843-5845 (1981).

    1982

25. S. Adachi
    Chemical etching of InP and InGaAsP/InP
    J. Electrochem. Soc. 129, pp. 609-613 (1982).

26. S. Adachi, H. Kawaguchi, and G. Iwane
    InGaAsP/InP planar-stripe lasers with chemically etched mirrors
    J. Electrochem. Soc. 129, pp. 883-886 (1982).

27. S. Adachi, Y. Noguchi, and H. Kawaguchi
    Chemical etching of InGaAsP/InP DH wafer
    J. Electrochem. Soc. 129, pp. 1053-1062 (1982).

28. S. Adachi, Y. Noguchi, and H. Kawaguchi
    Use of HBr-CH₃COOH-K₂Cr₂O₇ etchant to etched-mirror laser fabrication
    J. Electrochem. Soc. 129, pp. 1524-1527 (1982).

29. S. Adachi
    Refractive indices of III-V compounds: Key properties of InGaAsP relevant to device design
    J. Appl. Phys. 53, pp. 5863-5869 (1982).

30. S. Adachi, M. Kawashima, K. Kumabe, K. Yokoyama, and M. Tomizawa
    Electron transport in GaAs n⁺-p^--n⁺ submicron diodes
    IEEE Electron Dev. Lett. EDL-3, pp. 409-411 (1982).

31. S. Adachi
    Material parameters of In_1-xGa_xAs_yP_1-y and related binaries
    J. Appl. Phys. 53, pp. 8775-8792 (1982).

    1983

32. S. Adachi
    Lattice thermal resistivity of III-V compound alloys
    J. Appl. Phys. 54, pp. 1844-1848 (1983).

33. S. Adachi and K. Oe
    Internal strain and photoelastic effects in Ga_1-xAl_xAs/GaAs and In_1-xGa_xAs_yP_1-y/InP crystals
    J. Appl. Phys. 54, pp. 6620-6627 (1983).

34. S. Adachi and K. Oe
    Chemical etching characteristics of (001)GaAs
    J. Electrochem. Soc. 130, pp. 2427-2435 (1983).

    1984

35. S. Adachi and K. Oe
    Chemical etching of GaAs
    J. Electrochem. Soc. 131, pp. 126-130 (1984).

36. H. Asai, S. Adachi, S. Ando, and K. Oe
    Lateral GaAs growth over tungsten grating on (001)GaAs substrates by metalorganic chemical vapor deposition and application to vertical field-effect transistors
    J. Appl. Phys. 55, pp. 3868-3870 (1984).

37. S. Adachi and K. Oe
    Linear electro-optic effects in zincblende-type semiconductors: Key properties of InGaAsP relevant to device design
    J. Appl. Phys. 56, pp. 74-80 (1984).

38. S. Adachi and K. Oe
    Quadratic electro-optic (Kerr) effects in zincblende-type semiconductors: Key properties of InGaAsP relevant to device design
    J. Appl. Phys. 56, pp. 1499-1504 (1984).

    1985

39. S. Adachi, S. Ando, H. Asai, and N. Susa
    A new gate structure vertical-GaAs FET
    IEEE Electron Dev. Lett. EDL-6, pp. 264-266 (1985).

40. S. Adachi
    GaAs, AlAs, and Al_xGa_1-xAs: Material parameters for use in research and device applications
    J. Appl. Phys. 58, pp. R1-R29 (1985).

41. N. Susa, S. Ando, and S. Adachi
    Properties of tungsten film deposited on GaAs by RF magnetron sputtering
    J. Electrochem. Soc. 132, pp. 2245-2250 (1985).

42. S. Adachi and N. Susa
    Reactive ion etching of tungsten films sputter deposited on GaAs
    J. Elecectrochem. Soc. 132, pp. 2980-2989 (1985).

    1986

43. S. Adachi and T. Ishibashi
    Collector-up HBT's fabricated by Be⁺ and O⁺ ion implantations
    IEEE Electron Dev. Lett. EDL-7, pp. 32-34 (1986).

44. S. Adachi
    Be⁺/O⁺-ion implantation in GaAs-AlGaAs heterojunctions
    J. Appl. Phys. 60, pp. 959-964 (1986).

45. S. Yamahata, S. Adachi, and T. Ishibashi
    Be-ion implantation in Al_xGa_1-xAs
    J. Appl. Phys. 60, pp. 2814-2819 (1986).

    1987

46. S. Adachi
    Model dielectric constants of GaP, GaAs, GaSb, InP, InAs, and InSb
    Phys. Rev. B 35, pp. 7454-7463 (1987).

47. S. Adachi
    Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2-4 mm optoelectronic device applications
    J. Appl. Phys. 61, pp. 4869-4876 (1987).

48. S. Adachi
    Dual implantation of Be⁺ and F⁺ in GaAs and Al_xGa_1-xAs
    Appl. Phys. Lett. 51, pp. 1161-1163 (1987).

49. S. Adachi and S. Yamahata
    Thermal conversion of Al_xGa_1-xAs layers grown by molecular beam epitaxy
    Appl. Phys. Lett. 51, pp. 1265-1267 (1987).

50. S. Yamahata, S. Adachi, and T. Ishibashi
    Electrical properties of Be⁺-ion implanted Al_xGa_1-xAs p-n junctions
    J. Appl. Phys. 62, pp. 3042-3046 (1987).

    1988

51. S. Adachi
    Si-ion implantation in GaAs and Al_xGa_1-xAs
    J. Appl. Phys. 63, pp. 64-67 (1988).

52. S.Yamahata and S. Adachi
    Be⁺/P⁺ and Be⁺/As⁺ dual implantations into Al_xGa_1-xAs
    Appl. Phys. Lett. 52, pp. 1493-1495 (1988).

53. S. Adachi and H. Ito
    Thermal conversion and hydrogenation effects in AlGaAs
    J. Appl. Phys. 64, pp. 2772-2774 (1988).

54. S. Adachi and S. Yamahata
    Dual-species ion implantation in Al_xGa_1-xAs
    J. Appl. Phys. 64, pp. 3312-3314 (1988).

    
    [群馬大学]
    1988

55. S. Adachi
    Optical properties of Al_xGa_1-xAs alloys
    Phys. Rev. B 38, pp. 12345-12352 (1988).

56. S. Adachi
    Model dielectric constants of Si and Ge
    Phys. Rev. B 38, pp. 12966-12976 (1988).

    1989

57. S. Adachi
    Optical properties of In_1-xGa_xAs_yP_1-y alloys
    Phys. Rev. B 39, pp. 12612-12621 (1989).

58. S. Adachi
    Optical properties of a-Sn
    J. Appl. Phys. 66, pp. 813-819 (1989).

59. S. Adachi
    Excitonic effects in the optical spectrum of InP
    Jpn. J. Appl. Phys. 28, pp. 1536-1543 (1989).

60. S. Adachi
    Optical dispersion relations for Si and Ge
    J. Appl. Phys. 66, pp. 3224-3231 (1989).

61. S. Adachi
    Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, Al_xGa_1-xAs, and In_1-xGa_xAs_yP_1-y
    J. Appl. Phys. 66, pp. 6030-6040 (1989).

    1990

62. S. Adachi
    Excitonic effects in the optical spectrum of GaAs
    Phys. Rev. B 41, pp. 1003-1013 (1990).

63. S. Adachi
    Effects of the indirect transitions on optical dispersion relations
    Phys. Rev. B 41, pp. 3504-3508 (1990).

64. S. Adachi
    Optical dispersion relations for AlSb from E=0 to 6.0 eV
    J. Appl. Phys. 67, pp. 6427-6431 (1990).

65. S. Adachi
    Model dielectric function of hexagonal CdSe
    J. Appl. Phys. 68, pp. 1192-1199 (1990).

    1991

66. T. Miyazaki, M. Mori, and S. Adachi
    Epitaxial growth of InSb on sapphire by rf sputtering
    Appl. Phys. Lett. 58, pp. 116-118 (1991).

67. T. Miyazaki and S. Adachi
    Model dielectric constants of InSb
    Phys. Status Solidi B 163, pp. 299-310 (1991).

68. T. Aoki (青木利明：学部4年生) and S. Adachi
    Temperature dependence of the dielectric function of Si
    J. Appl. Phys. 69, pp. 1574-1582 (1991).

69. S. Adachi and T. Taguchi
    Optical properties of ZnSe
    Phys. Rev. B 43, pp. 9569-9577 (1991).

70. S. Adachi
    Optical dispersion relations in amorphous semiconductors
    Phys. Rev. B 43, pp. 12316-12321 (1991).

71. S. Adachi
    Optical properties of GaAs partially amorphized by ion implantation: Effective-medium-approximation analysis
    J. Appl. Phys. 69, pp. 7768-7773 (1991).

72. S. Adachi
    Chemical etching characteristics of (100)GaAs in Kusatsu-spa water
    Jpn. J. Appl. Phys. 30, pp. 1196-1197 (1991).

73. T. Miyazaki and S. Adachi
    Optical properties of InSb films deposited on sapphire substrates by rf sputtering
    J. Appl. Phys. 70, pp. 1672-1677 (1991).

74. S. Adachi
    Calculation model for the optical constants of amorphous semiconductors
    J. Appl. Phys. 70, pp. 2304-2308 (1991).

75. S. Adachi and T. Taguchi
    Quantum confinement of excitons in the spin-orbit-split-off band in ZnSe/ZnS strained-layer superlattices
    Phys. Rev. B 44, pp. 10633-10636 (1991).

76. S. Adachi
    Chemical etching of (100)GaAs in volcanic mineral water
    J. Electrochem. Soc. 138, pp. 3714-3716 (1991).

    1992

77. S. Adachi, T. Miyazaki, and S. Hamadate
    Optical properties of amorphous InSb
    J. Appl. Phys. 71, pp. 395-397 (1992).

78. S. Adachi and Y. Shindo
    Optical constants of e-GaSe
    J. Appl. Phys. 71, pp. 428-431 (1992).

79. S. Adachi and T. Aoki
    Optical properties of Si partially amorphized by ion implantation
    J. Appl. Phys. 71, pp. 3313-3319 (1992).

80. T. Miyazaki and S. Adachi
    Analysis of optical constants for sputter-deposited InSb films based on the interband-transition model
    Jpn. J. Appl. Phys. 31, pp. 979-983 (1992).

81. S. Adachi
    Dispersion of the linear electro-optic coefficients in GaAs
    J. Appl. Phys. 72, pp. 3702-3704 (1992).

82. T. Miyazaki and S. Adachi
    Low-temperature silicon homoepitaxy by rf sputtering
    J. Appl. Phys. 72, pp. 5471-5473 (1992).

83. T. Miyazaki and S. Adachi
    Spectroscopic-ellipsometry analysis of Si films prepared by rf sputtering
    Jpn. J. Appl. Phys. 31, pp. 3770-3774 (1992).

84. S. Adachi and K. Sato
    Numerical derivative analysis of the pseudodielectric functions of ZnTe
    Jpn. J. Appl. Phys. 31, pp. 3907-3912 (1992).

    1993

85. K. Sato (佐藤好三：修士学生) and S. Adachi
    Optical properties of ZnTe
    J. Appl. Phys. 73, pp. 926-931 (1993).

86. K. Utani (宇谷勝幸：修士学生), T. Suzuki, and S. Adachi
    HF- and NH₄OH-treated (111)Si surfaces studied by spectroscopic ellipsometry
    J. Appl. Phys. 73, pp. 3467-3471 (1993).

87. S. Ozaki (尾崎俊二：学部4年生) and S. Adachi
    Optical constants of ZnSe_xTe_1-x ternary alloys
    Jpn. J. Appl. Phys. 32, pp. 2620-2625 (1993).

88. T. Kimura (木村敏文：修士学生) and S. Adachi
    Numerical derivative analysis of the pseudodielectric function of CdTe
    Jpn. J. Appl. Phys. 32, pp. 2740-2745 (1993).

89. S. Adachi and T. Kimura
    Optical constants of Zn_1-xCd_xTe ternary alloys: Experiment and modeling
    Jpn. J. Appl. Phys. 32, pp. 3496-3501 (1993).

90. K. Utani (宇谷勝幸：修士学生) and S. Adachi
    HF-treated (111), (110) and (100)Si surfaces studied by spectroscopic ellipsometry
    Jpn. J. Appl. Phys. 32, pp. 3572-3576 (1993).

91. S. Adachi, T. Kimura, and N. Suzuki
    Optical properties of CdTe: Experiment and modeling
    J. Appl. Phys. 74, pp. 3435-3441 (1993).

92. S. Adachi and K. Utani
    Chemical treatment effects of Si surfaces in NH₄OH:H₂O₂:H₂O solutions studied by spectroscopic ellipsometry
    Jpn. J. Appl. Phys. 32, pp. L1189-L1191 (1993).

93. S. Imai (今井　俊：学部4年生) and S. Adachi
    Optical constants of In_1-xGa_xSb ternary alloys: Experiment and modeling
    Jpn. J. Appl. Phys. 32, pp. 3860-3865 (1993).

94. S. Adachi and T. Kimura
    Refractive-index dispersion in Zn_1-xCd_xTe ternary alloys
    Jpn. J. Appl. Phys. 32, pp. 3866-3867 (1993).

95. S. Adachi, T. Ikegami, and K. Utani
    Spectroscopic ellipsometry study of (111) and (100)Si surfaces etched in aqueous KOH solution
    Jpn. J. Appl. Phys. 32, pp.4398-4403 (1993).

96. S. Adachi and S. Ozaki
    Optical constants of amorphous Ga₂Se₃
    Jpn. J. Appl. Phys. 32, pp. 4446-4448 (1993).

97. T. Suzuki (鈴木隆博：修士学生) and S. Adachi
    Optical properties of amorphous Si partially crystallized by thermal annealing
    Jpn. J. Appl. Phys. 32, pp. 900-4906 (1993).

98. T. Miyazaki and S. Adachi
    Spectroscopic ellipsometry study of Si surfaces modified by low-energy Ar⁺ ion irradiation
    Jpn. J. Appl. Phys. 32, pp. 4941-4945 (1993).

99. S. Ozaki (尾崎俊二：修士学生) and S. Adachi
    Optical constants of cubic ZnS
    Jpn. J. Appl. Phys. 32, pp.5008-5013 (1993).

    1994

100. K. Kobayashi (小林一行：学部4年生), T. Suzuki, and S. Adachi
     Chemical treatment effects on Si surfaces in SC2 solutions studied by spectroscopic ellipsometry
     Jpn. J. Appl. Phys. 33, pp. L15-L17 (1994).

101. S. Adachi, H. Kato, A. Moki, and K. Ohtsuka
     Refractive index of (Al_xGa_1-x)_0.5In_0.5P quaternary alloys
     J. Appl. Phys. 75, pp. 478-480 (1994).

102. H. Kato (加藤裕一：修士学生), S. Adachi, H. Nakanishi, and K. Ohtsuka
     Optical properties of (Al_xGa_1-x)_0.5In_0.5P quaternary alloys
     Jpn. J. Appl. Phys. 33, pp. 186-192 (1994).

103. N. Suzuki (鈴木規博：修士学生) and S. Adachi
     Optical properties of PbTe
     Jpn. J. Appl. Phys. 33, pp. 193-198 (1994).

104. S. Ninomiya (二宮　勉：修士学生) and S. Adachi
     Chemical etching of thermally grown SiO₂ films on SiC studied by spectroscopic ellipsometry
     Jpn. J. Appl. Phys. 33, pp. 1833-1834 (1994).

105. S. Adachi, T. Matsumura, and T. Suzuki
     Optical properties of ion-implanted Si layers studied by spectroscopic ellipsometry
     Jpn. J. Appl. Phys. 33, pp. 1931-1936 (1994).

106. S. Ninomiya (二宮　勉：修士学生) and S. Adachi
     Optical constants of 6H-SiC single crystals
     Jpn. J. Appl. Phys. 33, pp. 2479-2482 (1994).

107. T. Suzuki (鈴木隆博：修士学生) and S. Adachi
     Chemical treatment effects of Si surfaces in 1NH₂OH:XH₂O₂:5H₂O solutions studied by spectroscopic ellipsometry
     Jpn. J. Appl. Phys. 33, pp. 2689-2691 (1994).

108. S. Ozaki (尾崎俊二：修士学生) and S. Adachi
     Optical constants of ZnS_xSe_1-x ternary alloys
     J. Appl. Phys. 75, pp. 7470-7475 (1994).

109. T. Suzuki (鈴木隆博：修士学生) and S. Adachi
     Chemical treatment effect of Si(111) surfaces in NH₄F solution studied by spectroscopic ellipsometry
     Jpn. J. Appl. Phys. 33, pp. 5599-5602 (1994).

110. T. Miyazaki and S. Adachi
     Spectroscopic-ellipsometry and thermoreflectance spectra of sputter-deposited InSb films
     Jpn. J. Appl. Phys. 33, pp. 5817-5822 (1994).

111. S. Ozaki (尾崎俊二：修士学生), K. Takada, and S. Adachi
     Optical constants of amorphous Ga₂Te₃ and In₂Te₃
     Jpn. J. Appl. Phys. 33, pp. 6213-6217 (1994).

112. A. K. Harman (A. K. ハーマン：学部４年生), S. Ninomiya, and S. Adachi
     Optical constants of sapphire (a-Al₂O₃) single crystals
     J. Appl. Phys. 76, pp. 8032-8036 (1994).

     1995

113. N. Suzuki (鈴木規博：修士学生), K. Sawai, and S. Adachi
     Optical properties of PbSe
     J. Appl. Phys. 77, pp. 1249-1255 (1995).

114. T. Miyazaki and S. Adachi
     Analysis of spectroscopic-ellipsometry and thermoreflectance spectra of Si
     J. Appl. Phys. 77, pp. 1741-1746 (1995).

115. S. Adachi and T. Miyazaki
     Ellipsometric and thermoreflectance spectra of epitaxial InSb film
     Phys. Rev. B 51, pp. 14317-14323 (1995).

116. S. Ninomiya (二宮　勉：修士学生) and S. Adachi
     Optical properties of wurtzite CdS
     J. Appl. Phys. 78, pp. 1183-1190 (1995).

117. S. Ozaki (尾崎俊二：修士学生) and S. Adachi
     Spectroscopic ellipsometry and thermoreflectance of GaAs
     J. Appl. Phys. 78, pp. 3380-3386 (1995).

118. S. Ninomiya (二宮　勉：修士学生) and S. Adachi
     Optical properties of cubic and hexagonal CdSe
     J. Appl. Phys. 78, pp. 4681-4689 (1995).

119. N. Suzuki (鈴木規博：修士学生) and S. Adachi
     Optical properties of SnTe
     Jpn. J. Appl. Phys. 34, pp. 5977-5983 (1995).

     1996

120. S. Ozaki (尾崎俊二：修士学生), S. Adachi, M. Sato, and K. Ohtsuka
     Ellipsometry and thermoreflectance spectra of (Al_xGa_1-x)_0.5In_0.5P alloys
     J. Appl. Phys. 79, pp. 439-445 (1996).

121. N. Suzuki (鈴木規博：修士学生) and S. Adachi
     Optical constants of Pb_1-xSn_xTe alloys
     J. Appl. Phys. 79, pp. 2065-2069 (1996).

122. K. Kobayashi (小林一行：修士学生), S. Adachi, and H. Takizawa
     NH₄OH-treated Si(111) surfaces studied by spectroscopic ellipsometry and atomic force microscopy
     Jpn. J. Appl. Phys. 35, pp. 515-519 (1996).

123. S. Adachi, S. Ozaki, M. Sato, and K. Ohtsuka
     Electroreflectance study of (Al_xGa_1-x)_0.5In_0.5P alloys
     Jpn. J. Appl. Phys. 35, pp. 537-542 (1996).

124. T. Miyazaki, M. Kunugi, Y. Kitamura, and S. Adachi
     Epitaxial growth of InSb films by rf magnetron sputtering
     Thin Solid Films 287, pp. 51-56 (1996).

125. S. Adachi, T. Arai, and K. Kobayashi
     Chemical treatment effect of Si(111) surfaces in F-based aqueous solutions
     J. Appl. Phys. 80, pp. 5422-5426 (1996).

126. K. Kobayashi (小林一行：修士学生), H. Unno, H. Takizawa, and S. Adachi
     Chemical treatment effect of Si(111) surfaces in H₂SO₄:H₂O₂ solution
     Jpn. J. Appl. Phys. 35, pp. 5925-5928 (1996).

127. H. Yoshikawa (吉川　恒：修士学生) and S. Adachi
     Analysis of ellipsometric and thermoreflectance spectra for P-based III-V compounds GaP and InP
     Jpn. J. Appl. Phys. 35, pp. 5946-5954 (1996).

     1997

128. S. Osakabe (長壁伸也:修士学生) and S. Adachi
     Chemical treatment effect of (001) GaAs surfaces in alkaline solutions
     J. Electrochem. Soc. 144, pp. 290-294 (1997).

129. K. Suzuki (鈴木賢一：修士学生) and S. Adachi
     Thermoreflectance spectroscopy of Te-based II-VI compounds ZnTe and CdTe
     J. Appl. Phys. 82, pp. 1320-1326 (1997).

130. T. Ojima (尾島隆之：修士学生) and S. Adachi
     Optical dispersion relations in amorphous semiconductors InSb and GeSe₂
     J. Appl. Phys. 82, pp. 3105-3110 (1997).

131. T. Kawashima (川島貴宏：修士学生), H. Yoshikawa, S. Adachi, S. Fuke, and K. Ohtsuka
     Optical properties of hexagonal GaN
     J. Appl. Phys. 82, pp. 3528-3535 (1997).

132. H. Yoshikawa (吉川　恒：修士学生) and S. Adachi
     Optical constants of ZnO
     Jpn. J. Appl. Phys. 36, pp. 6237-6243 (1997).

133. S. Osakabe (長壁伸也：修士学生) and S. Adachi
     Study of GaAs(001) surfaces treated in aqueous HCl solutions
     Jpn. J. Appl. Phys. 36, pp. 7119-7125 (1997).

     1998

134. K. Suzuki (鈴木賢一：修士学生) and S. Adachi
     Optical constants of Cd_xZn_1-xSe ternary alloys
     J. Appl. Phys. 83, pp. 1018-1022 (1998).

135. H. Kanazawa (金澤秀之：修士学生) and S. Adachi
     Optical properties of PbS
     J. Appl. Phys. 83, pp. 5997-6001 (1998).

136. T. Ito (伊藤貴之：博士学生), T. Kawashima, H. Yamaguchi, T. Masumi, and S. Adachi
     Optical properties of Cu₂O studied by spectroscopic ellipsometry
     J. Phys. Soc. Jpn 67, pp. 2125-2131 (1998).

137. T. Ito (伊藤貴之：博士学生), H. Yamaguchi, T. Masumi, and S. Adachi
     Optical properties of CuO studied by spectroscopic ellipsometry
     J. Phys. Soc. Jpn 67, pp. 3304-3309 (1998).

138. T. Kawashima (川島貴宏：修士学生) and S. Adachi
     Optical constants of CuGaSe₂ and CuInSe₂
     J. Appl. Phys. 84, pp. 5202-5209 (1998).

139. H. Kanazawa (金澤秀之：修士学生) and S. Adachi
     Spectroellipsometry and electroreflectance of PbS
     J. Appl. Phys. 84, pp. 5342-5344 (1998).

     1999

140. T. Innami (院南　雄：修士学生), T. Miyazaki, and S. Adachi
     Optical constants of amorphous Se
     J. Appl. Phys. 86, pp. 1382-1387 (1999).

141. H. Kanazawa (金澤秀之：修士学生), S. Adachi, T. Yamaguchi, S. Murashige, and K. Murakami
     Spectroscopic ellipsometry study of Pb_1-xEu_xSe (0 < x < 0.45)
     J. Appl. Phys. 86, pp. 2611-2615 (1999).

142. T. Innami (院南　雄：修士学生) and S. Adachi
     Structural and optical properties of photocrystallized Se films
     Phys. Rev. B 60, pp. 8284-8289 (1999).

143. Y. Matsumoto (松本康幸：修士学生), S. Ozaki, and S. Adachi
     Optical properties of the bulk amorphous semiconductor ZnIn₂Te₄
     J. Appl. Phys. 86, pp. 3705-3708 (1999).

144. A. Kaneta (金田昭男：修士学生) and S. Adachi
     Photoreflectance study of hexagonal CdSe
     J. Phys. D: Appl. Phys. 32, pp. 2337-2341 (1999).

145. Y. Kawabata (川端裕次：修士学生) and S. Adachi
     Studies of Si(111) surfaces treated in aqueous fluorine-based solutions
     Appl. Surf. Sci. 152, pp. 177-184 (1999).

     2000

146. S. Adachi and M. Takahashi
     Optical properties of TiN films deposited by direct current reactive sputtering
     J. Appl. Phys. 87, pp. 1264-1269 (2000).

147. N. Tomita (富田宣子：修士学生), Y. Kawabata, and S. Adachi
     Characterization of Si(111) surfaces treated in aqueous H₂SiF₆ solution
     Mat. Sci. Eng. B 68, pp. 175-181 (2000).

148. A. Kaneta (金田昭男：修士学生) and S. Adachi
     Photoreflectance study in the E₁ and E₁+Δ₁ transition regions of CdTe
     J. Appl. Phys. 87, pp. 7360-7365 (2000).

149. K. Sakaino (境野　薫：修士学生), Y. Kawabata, and S. Adachi
     Etching characteristics of Si(100) surfaces in an aqueous NaOH solution
     J. Electrochem. Soc. 147, pp. 1530-1534 (2000).

150. A. Kaneta (金田昭男：修士学生) and S. Adachi
     Photoreflectance study in the E₁ and E₁+Δ₁ transition regions of ZnTe
     J. Phys. D: Appl. Phys. 33, pp. 901-905 (2000).

151. D. Kikuchi (菊池大哲：修士学生) and S. Adachi
     Chemically cleaned InP(100) surfaces in aqueous HF solutions
     Mat. Sci. Eng. B 76, pp. 133-138 (2000).

152. H. Moriya (守屋英教：学部4年生), A. Kaneta, and S. Adachi
     Photoreflectance study of crystalline silicon
     Mat. Sci. Eng. B 76, pp. 232-236 (2000).

153. D. Kikuchi (菊池大哲：修士学生), Y. Matsui, and S. Adachi
     Chemically treated InP(100) surfaces in aqueous HCl solutions
     J. Electrochem. Soc. 147, pp. 1973-1978 (2000).

154. K. Senthil (K. センシル：博士学生, インド・バラティア大学), D. Mangalaraj, Sa. K. Narayandass, and S. Adachi
     Optical constants of vacuum-evaporated cadmium sulphide thin films studied by spectroscopic ellipsometry
     Mat. Sci. Eng. B 78, pp. 53-58 (2000).

155. S. Adachi and H. Mori
     Optical properties of fully amorphous silicon
     Phys. Rev. B 62, pp. 10158-10164 (2000).

156. S. Adachi and D. Kikuchi
     Chemical etching characteristics of GaAs(100) surfaces in aqueous HF solutions
     J. Electrochem. Soc. 147, pp. 4618-4624 (2000).
     2001
157. K. Sakaino (境野　薫：修士学生) and S. Adachi
     Study of Si(100) surfaces etched in TMAH solution
     Sens. Actuators A 88, pp. 71-78 (2001).

158. S. Adachi
     Response to "Comment on 'Photoreflectance study in the E₁ and E₁+Δ₁ transition regions of CdTe'"
     J. Appl. Phys. 89, p. 3071 (2001).

159. T. Miyazaki, T. Fujimaki, S. Adachi, and K. Ohtsuka
     Properties of GaN films deposited on Si(111) by radio-frequency-magnetron sputtering
     J. Appl. Phys. 89, pp. 8316-8320 (2001).

160. H. Mori (森　裕史：修士学生), S. Adachi, and M. Takahashi
     Optical properties of self-ion-implanted Si(100) studied by spectroscopic ellipsometry
     J. Appl. Phys. 90, pp. 87-93 (2001)

161. S. Ozaki and S. Adachi
     Optical properties and electronic band structure of ZnIn₂Te₄
     Phys. Rev. B 64, pp. 85208-1-7 (2001).

162. A. B. Djurisic, W. L. Guo, E. H. Li, L. S. M. Lam, W. K. Chan, S. Adachi, Z. T. Liu, and H. S. Kwok
     Optical properties of doped polycarbonate layers
     Opt. Commun. 197, pp. 355-361 (2001).

163. N. Tomita (富田宣子：修士学生) and S. Adachi
     Chemical treatment effects on Si(111) surfaces in aqueous NaF solution
     Jpn. J. Appl. Phys. 40, pp. 6705-6710 (2001).

     2002

164. K. Tsunoda (角田一晃：修士学生), S. Adachi, and M. Takahashi
     Spectroscopic-ellipsometry study of ion-implanted Si(100) wafers
     J. Appl. Phys. 91, pp. 2936-2941 (2002).

165. N. Tomita (富田宣子：修士学生) and S. Adachi
     Characterization of Si(111) surfaces treated in NH₄F and NH₄HF₂ solutions
     J. Electrochem. Soc. 149, pp. G245-G250 (2002).

166. T. Mishima (三島健人：修士学生), M. Miura, S. Ozaki, and S. Adachi
     Photoreflectance study in the E₀ and E₀+Δ₀ transition regions of GaP
     J. Appl. Phys. 91, pp. 4904-4909 (2002).

167. A. Imada (今田明範：学部４年生), S. Ozaki, and S. Adachi
     Photoreflectance spectroscopy of wurtzite CdS
     J. Appl. Phys. 92, pp. 1793-1798 (2002).

168. K. Sakaino (境野　薫：修士学生) and S. Adachi
     Properties of silicon (111) and (100) surfaces etched in choline solution
     J. Electrochem. Soc. 149, pp. G543-G549 (2002).

169. S. Adachi, H. Mori, and S. Ozaki
     Model dielectric function for amorphous semiconductors
     Phys. Rev. B 66, pp. 153201-1-4 (2002).

     2003

170. S. Adachi, H. Mori, and M. Takahashi
     Model-dielectric-function analysis of ion-implanted Si(100) wafers
     J. Appl. Phys. 93, pp. 115-120 (2003).

171. H. Mori (森　裕史：修士学生) and S. Adachi
     Optical dispersion relations in amorphous semiconductors: Model-dielectric-function approach to amorphous GaAs
     Jpn. J. Appl. Phys. 42, pp. 58-62 (2003).

172. T. Tsuchiya (土屋知英：修士学生), S. Ozaki, and S. Adachi
     Modelling the optical constants of cubic ZnS in the 0-20 eV spectral region
     J. Phys.: Condens. Mater. 15, pp. 3717-3730 (2003).

173. S. Ozaki, K. Muto, and S. Adachi
     Optical properties and electronic band structure of CdGa₂Te₄
     J. Phys. Chem. Solids 64, pp. 1935-1939 (2003).

174. S. Ozaki, T. Mishima, and S. Adachi
     Photoreflectance spectroscopy of ZnO for ordinary and extraordinary rays
     Jpn. J. Appl. Phys. 42, pp. 5465-5471 (2003).

175. K. Tsunoda (角田一晃：修士学生), E. Ohashi, and S. Adachi
     Spectroscopic characterization of naturally and chemically oxidized silicon surfaces
     J. Appl. Phys. 94, pp. 5613-5616 (2003).

176. S. Ozaki, S. Boku, and S. Adachi
     Optical absorption and photoluminescence in the defect-chalcopyrite-type semiconductor ZnIn₂Te₄
     Phys. Rev. B 68, pp. 235201-1-7 (2003).

     2004

177. H. Noguchi (野口裕司：修士学生), S. Ozaki, S. Adachi, and K. Ohtsuka
     Temperature dependence of electroreflectance spectroscopy in Ga_0.5In_0.5P alloy
     Semicond. Sci. Technol. 19, pp. 807-812 (2004).

178. S. Hikino (挽野真一：修士学生) and S. Adachi
     Structural changes in ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry
     J. Phys. D: Appl. Phys. 37, pp. 1617-1623 (2004).

179. J. Rafael Molina C, R. Espinosa-Luna, and S. Adachi
     Comment: Erratum to ' Photoreflectance study in the E₁ and E₁+Δ₁ transition regions of ZnTe and CdTe and in the E₀ and E₀+Δ₀ transition regions of GaP '
     J. Phys. D: Appl. Phys. 37, p. 2047 (2004).

180. K. Kurihara (栗原克典：学部4年生), S. Hikino, and S. Adachi
     Optical properties of N⁺ ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry
     J. Appl. Phys. 96, pp. 3247-3254 (2004).

     2005

181. K. Yoshida (吉田恵也：修士学生) and S. Adachi
     Rapid thermal annealing characteristics of P+ ion-implanted Si(100) wafers studied by spectroscopic ellipsometry
     Jpn. J. Appl. Phys. 44, pp. 802-807 (2005).

182. S. Ozaki, K. Muto, H. Nagata, and S. Adachi
     Optical absorption and emission in defect-chalcopyrite-type semiconductor CdGa₂Te₄
     J. Appl. Phys. 97, pp. 043507-1-7 (2005).

183. K. Tomioka (冨岡克広：修士学生) and S. Adachi
     Spectroscopic characterization of GaP surfaces treated in aqueous HCl solution
     J. Electrochem. Soc. 152, pp. G173-G178 (2005).

184. T. Miyazaki, K. Takada, and S. Adachi
     Properties of rf-sputter-deposited GaN films in a nitrogen/hydrogen mixed gas
     J. Appl. Phys. 97, pp. 093516-1-7 (2005).

185. H. Noguchi (野口裕司：修士学生) and S. Adachi
     Properties of Si(111), (110) and (100) surfaces treated in aqueous KF solution
     Appl. Surf. Sci. 246, pp. 139-148 (2005).

186. S. Ozaki, T. Tsuchiya, Y. Inokuchi, and S. Adachi
     Photoluminescence and photomodulated transmittance spectroscopy of ZnO nanowires
     Phys. Status Solidi A 202, pp. 1325-1335 (2005).

187. M. Sasaki (佐々木学：修士学生), S. Ozaki, and S. Adachi
     Ellipsometric and thermoreflectance spectra of CdGa₂Te₄
     Phys. Rev. B 72, pp. 04518-1-6 (2005).

188. S. Adachi and K. Tomioka
     Visible light emission from porous silicon prepared by photoetching in alkaline solution
     Electrochem. Solid-State Lett. 8, pp. G251-G253 (2005).

189. K. Tomioka (冨岡克広：修士学生) and S. Adachi
     Structural and photoluminescence properties of porous GaP formed by electrochemical etching
     J. Appl. Phys. 98, pp. 073511-1-7 (2005).

190. K. Tomioka (冨岡克広：修士学生) and S. Adachi
     Strong and stable ultraviolet emission from porous silicon prepared by photoetching in aqueous KF solution
     Appl. Phys. Lett. 87, pp. 251920-1-3 (2005).

     2006

191. S. Adachi
     Chemical etching of InP (100) wafer based on a volcanic mineral water
     Mater. Sci. Eng. B 126, pp. 49-52 (2006).

192. K. Uchida (内田　薫：学部４年生), K. Tomioka, and S. Adachi
     Ultraviolet emission from porous silicon photosynthesized in aqueous alkali fluoride solutions
     J. Appl. Phys. 100, pp. 014301-1-5 (2006).

193. S. Ozaki, M. Sasaki, and S. Adachi
     Positive temperature variation of the bandgap energy in AgGaSe₂
     Phys. Status Solidi A 203, pp. 2648-2652 (2006).

194. S. Ozaki and S. Adachi
     Optical properties and electronic band structure of AgInSe₂
     Phys. Status Solidi A 203, pp. 2919-2923 (2006).

195. H. Morota (諸田広彬：学部４年生) and S. Adachi
     Properties of GaP(001) surfaces chemically treated in NH₄OH solution
     J. Appl. Phys. 100, pp. 054904-1-6 (2006).

196. Y. K. Xu (ジョゲンガイ：修士学生) and S. Adachi
     Light-emitting porous silicon formed by photoetching in aqueous HF/KIO₃ solution
     J. Phys. D: Appl. Phys. 39, pp. 4572-4577 (2006).

197. S. Ozaki and S. Adachi
     Optical absorption and photoluminescence in the ternary chalcopyrite semiconductor AgInSe₂
     J. Appl. Phys. 100, pp. 113526-1-8 (2006).

     2007

198. S. Adachi and T. Kubota
     Light-emitting porous silicon synthesized by photoetching in aqueous HF/I₂ solution
     Electrochem. Solid-State Lett. 10, pp. H39-H42 (2007).

199. Y. K. Xu (ジョゲンガイ：修士学生) and S. Adachi
     Properties of light-emitting porous silicon photoetched in aqueous HF/FeCl₃ solution
     J. Appl. Phys. 101, pp. 103509-1-6 (2007).

200. T. Tamura (田村知之：学部４年生) and S. Adachi
     Anodic etching characteristics of n-type silicon in aqueous HF/KIO₃ solution
     J. Electrochem. Soc. 154, pp. H681-H686 (2007).

201. H. Morota (諸田広彬：学部４年生) and S. Adachi
     Properties of GaP(001) surfaces treated in aqueous HF solutions
     J. Appl. Phys. 101, pp. 113518-1-6 (2007).

202. T. Ogawa (小川達也：学部４年生), H. Morota, and S. Adachi
     Thermal annealing behaviors of GaP(001) surface
     J. Phys. D: Appl. Phys. 40, pp. 4603-4609 (2007).

203. Y. Take (武　宜成：修士学生), S. Ozaki, and S. Adachi
     Ellipsometric and thermoreflectance spectroscopy of defect-chalcopyrite semiconductor CdIn₂Te₄
     Phys. Rev. B 76, pp. 035202-1-8 (2007).

204. S. Adachi, T. Miyazaki, K. Inoue, and S. Sodezawa
     Light emission from porous silicon photosynthesized in aqueous alkali salt solutions
     Jpn. J. Appl. Phys. 46, pp. 4028-4034 (2007).

205. S. Tomioka (富岡征悟：修士学生), T. Miyazaki, and S. Adachi
     Porous silicon formation by photoetching in HF/H₂O₂ solution using incoherent light source
     Jpn. J. Appl. Phys. 46, pp. 5021-5024 (2007).

206. S. Ozaki and S. Adachi
     Temperature dependence of the lowest-direct-bandgap energy in the ternary chalcopyrite semiconductor AgInSe₂
     J. Mater. Sci.: Mater. Electron. 18, pp. S25-S28 (2007).

207. S. Ozaki, Y. Take, and S. Adachi
     Optical properties and electronic energy band structure of CdIn₂Te₄
     J. Mater. Sci.: Mater. Electron. 18, pp. S347-S350 (2007).

208. D. Hoshino (星野大輔：修士学生) and S. Adachi
     Stain etching characteristics of silicon (001) surfaces in aqueous HF/K₂Cr₂O₇ solutions
     J. Electrochem. Soc. 154, pp. E139-E144 (2007).

209. S. Adachi
     Lattice thermal conductivity of group-IV and III-V semiconductor alloys
     J. Appl. Phys. 102, pp. 063502-1-7 (2007).

210. S. Adachi and M. Oi
     Spectroscopic investigation of light-emitting porous silicon photoetched in aqueous HF/I₂ solution
     J. Appl. Phys. 102, pp. 063506-1-9 (2007).

     2008

211. H. Rokugawa (六川　洋：学部4年生) and S. Adachi
     Properties of GaP(001) surfaces thermally annealed in dry N₂ atmosphere
     J. Appl. Phys. 103, pp. 093535-1-9 (2008).

212. Y. K. Xu (ジョゲンガイ：修士学生) and S. Adachi
     Properties of light-emitting porous silicon formed by stain etching in HF/KIO₃ solution under light illumination
     J. Appl. Phys. 103, pp. 103512-1-6 (2008).

213. S. Adachi and T. Kubota
     Electroluminescence from porous silicon formed by photoetching in an HF/I₂ solution
     J. Porous Mater. 15, pp. 427-431 (2008).

214. S. Adachi and T. Takahashi
     Direct synthesis and properties of K₂SiF₆:Mn⁴⁺ phosphor by wet chemical etching of Si wafer
     J. Appl. Phys. 104, pp. 023512-1-3 (2008).

215. T. Takahashi (高橋　亨：修士学生) and S. Adachi
     Mn⁴⁺-activated red photoluminescence in K₂SiF₆ phosphor
     J. Electrochem. Soc. 155, pp. E183-E188 (2008).

     2009

216. S. Adachi and T. Takahashi
     Direct synthesis of K₂SiF₆:Mn⁴⁺ red phosphor from crushed quartz schist by wet chemical etching
     Electrochem. Solid-State Lett. 12, pp. J20-J23 (2009).

217. H. Rokugawa (六川　洋：修士学生) and S. Adachi
     Properties of GaP(001) surfaces treated in aqueous NH₄F solution
     J. Electrochem. Soc. 156, pp. H92-H97 (2009).

218. Y. K. Xu (ジョゲンガイ：博士学生) and S. Adachi
     Properties of Na₂SiF₆:Mn⁴⁺ and Na₂GeF₆:Mn⁴⁺ red phosphors synthesized by wet chemical etching
     J. Appl. Phys. 105, pp. 013525-1-6 (2009).

219. H. Morota (諸田広彬：修士学生) and S. Adachi
     Properties of GaAs(001) surfaces thermally annealed in vacuum
     J. Appl. Phys. 105, pp. 043508-1-7 (2009).

220. T. Nakamura, T. Ogawa, S. Adachi, and M. Fujii
     Resonant energy transfer from silicon nanocrystals to iodine molecules
     Phys. Rev. B 79, pp. 075309-1-6 (2009).

221. K. Takeuchi (竹内勝起：修士学生) and S. Adachi
     Optical properties of β-Sn films
     J. Appl. Phys. 105, pp. 073520-1-6 (2009).

222. T. Tamura (田村知之：修士学生) and S. Adachi
     Photo-oxidation effects on light-emitting porous Si properties
     J. Appl. Phys. 105, pp. 113518-1-7 (2009).

223. Y. K. Xu (ジョゲンガイ：博士学生) and S. Adachi
     Properties of green-light-emitting anodic layers formed on Si substrates in HF/MnO₂ mixed solution
     J. Appl. Phys. 105, pp. 113525-1-7 (2009).

224. H. Morota (諸田広彬：修士学生) and S. Adachi
     Structural and optical properties of GaAs(001) surfaces thermally annealed in dry N₂ atmosphere
     J. Appl. Phys. 105, pp. 123520-1-7 (2009).

225. T. Takahashi (高橋　亨：修士学生) and S. Adachi
     Synthesis of K₂SiF₆:Mn⁴⁺ red phosphor from silica glasses by wet chemical etching in HF/KMnO₄ solution
     Electrochem. Solid-State Lett. 12, pp. J69-J71 (2009).

226. S. Adachi and T. Takahashi
     Photoluminescent properties of K₂GeF₆:Mn⁴⁺ red phosphor synthesized from aqueous HF/KMnO₄ solution
     J. Appl. Phys. 106, pp. 013516-1-6 (2009).

227. T. Tamura (田村知之：修士学生), A. Aisyah, and S. Adachi
     Anodic current and temperature dependence of light-emitting porous Si properties
     J. Electrochem. Soc. 156, pp. K173-K179 (2009).

228. T. Takahashi (高橋　亨：修士学生), T. Nakamura, and S. Adachi
     Blue-light emitting ZnSe random laser
     Opt. Lett. 34, pp. 3923-3925 (2009).

     2010

229. Y. K. Xu (ジョゲンガイ：博士学生) and S. Adachi
     Photoluminescence properties of anodic Si layers formed in HF/oxidant electrolytes
     J. Electrochem. Soc. 157, pp. H44-H49 (2010).

230. H. Rokugawa (六川　洋：修士学生) and S. Adachi
     Invesitigation of rapid thermally annealed GaP(001) surfaces in vacuum
     Surf. Interface Anal. 42, pp. 88-94 (2010).

231. K. Takauchi (竹内勝起：修士学生) and S. Adachi
     Optical properties of Al_xGa_1-xN alloy
     J. Appl. Phys. 107, pp. 023306-1-11 (2010).

232. T. Nakamura, T. Ogawa, N. Hosoya, and S. Adach
     Effects of thermal oxidation on the photoluminescence properties of porous silicon
     J. Lumin. 130, pp. 682-687 (2010).

233. S. Arai (新井進也：修士学生), S. Ozaki, and S. Adach
     Optical properties and electronic band structure of AgGaTe₂ chalcopyrite semiconductor
     Appl. Opt. 49, pp. 829-837 (2010).

234. K. Koitabashi (小板橋敬佑：修士学生), S. Ozaki, and S. Adachi
     Optical properties of single-crystalline chalcopyrite semiconductor AgInSe₂
     J. Appl. Phys. 107, pp. 053516-1-10 (2010).

235. T. Nakamura, T. Takahashi, and S. Adachi
     Temperature dependence of GaAs random laser characteristics
     Phys. Rev. B 81, pp. 125324-1-6 (2010).

236. Y. Arai (新井祐輔：修士学生), T. Takahashi, and S. Adachi
     Photoluminescent properties of K₂SnF₆:H2O:Mn⁴⁺ red phosphor
     Opt. Mater. 32, pp. 1095-1101 (2010).

237. H. Rokugawa (六川　洋：修士学生) and S. Adachi
     An Etchant System, Ag₂CrO₄-HF-H₂O, for Highly Aligned Si Nanowire Fabrication
     J. Electrochem. Soc. 157, pp. K157-K161 (2010).

238. Y. K. Xu (ジョゲンガイ：博士学生) and S. Adachi
     Multiple-peak structure in porous Si photoluminescence
     J. Appl. Phys. 107, pp. 123520-1-8 (2010).

239. Y. Kobayashi (小林也寸志：修士学生) and S. Adachi
     Structural and optical properties of Si nanowires synthesized by galvanic cell reaction
     Jpn. J. App1. Phys. 49, pp. 075002-1-7 (2010).

240. T. Arai (新井隆広：修士学生), Y. Arai, T. Takahashi, and S. Adachi
     A yellow phosphor K₂SiF₆ activated by Mn⁴⁺ ions
     J. Appl. Phys. 108, pp. 063506-1-7 (2010).

241. T. Sasaoka (笹岡　敬：修士学生), M. Mori, T. Miyazaki, and S. Adachi
     Room-temperature infrared photoluminescence from sputter-deoposited InN films
     J. Appl. Phys. 108, pp. 063538-1-5 (2010).

242. T. Nakamura, N. Hosoya, B. P. Tiwari, and S. Adachi
     Properties of silver/porous-silicon nanocomposite powders prepared by metal assisted electroless chemical etching
     J. Appl. Phys. 108, pp. 104315-1-6 (2010).

243. R. Kasa (笠　亮太：修士学生), Y. Arai, T. Takahashi, and S. Adachi
     Photoluminescent properties of cubic K₂MnF₆ particles synthesized in metal immersed HF/KMnO4 solutions
     J. Appl. Phys. 108, pp. 063538-1-5 (2010).

     2011

244. T. Nakamura, T. Hosaka, S. Adachi
     Gold-nanoparticle-assisted random lasing from powdered GaN
     Opt. Express 19, pp. 467-475 (2011).

245. Y. K. Xu (ジョゲンガイ：博士学生) and S. Adachi
     Properties of Mn⁴⁺-activated hexafluorotitanate phosphors
     J. Electrochem. Soc. 158, pp. J58-J65 (2011).

246. Y. Arai (新井祐輔：修士学生) and S. Adachi
     Optical properties of K₂SnF₆･H₂O:Mn⁴⁺ hydrate phosphor
     J. Electrochem. Soc. 158, pp. J81-J85 (2011).

247. Y. Arai (新井祐輔：修士学生) and S. Adachi
     Photoluminescence and internal vibronic frequencies of Mn₄^2- ion in Cs₂SiF₆ and Cs₂GeF₆ red phosphors
     J. Electrochem. Soc. 158, pp. J81-J85 (2011).

248. T. Nakamura, T. Hosaka, and S. Adachi
     Surface-plasmon-enhanced band-edge emission from Au/GaN powders
     Appl. Phys. Lett. 98, pp. 161906-1-3 (2011).

249. J. Nara (奈良淳一：学部4年生) and S. Adachi
     Optical properties of SnCl₂ phosphor
     J. Appl. Phys. 109, pp. 083539-1-7 (2011).

250. Y. Kato (加藤優希：学部4年生) and S. Adachi
     Synthesis of Si nanowire arrays in AgO/HF solution and their optical and wettability properties
     J. Electrochem. Soc. 158, pp. K157-K163 (2011).

251. T. Arai (新井隆広：修士学生) and S. Adachi
     Temperature-dependent photoluminescence properties of MnF₂: Configurational-coordinate model analysis
     J. Appl. Phys. 109, pp. 103506-1-6 (2011).

252. Y. Arai (新井祐輔：修士学生) and S. Adachi
     Optical properties of Mn⁴⁺-activated Na₂SnF₆ and Cs₂SnF₆ red phosphors
     J. Lumin. 131, pp, 2652-2660 (2011).

253. T. Nakamura, B. P. Tiwari, and S. Adachi
     Direct synthesis and enhanced catalytic activities of platinum and porous-silicon composites by metal-assisted chemical etching
     Jpn. J. Appl. Phys. 50, pp. 081301-1-4 (2011).

254. T. Arai (新井隆広：修士学生) and S. Adachi
     Excited states of 3d³ electrons in K₂SiF₆:Mn⁴⁺ red phosphor studied by photoluminescence excitation spectroscopy
     Jpn. J. Appl. Phys. 50, pp. 092401-1-5 (2011).

255. T. Arai (新井隆広：修士学生) and S. Adachi
     Mn-activated Na₂SiF₆ red and yellowish-green phosphors: A comparative study
     J. Appl. Phys. 110, pp. 063514-1-9 (2011).

256. J. Nara (奈良淳一：修士学生) and S. Adachi
     Optical properties of KCl:Sn²⁺ phosphors synthesized from aqueous KCl/SnClSUB>22 solutions
     J. Appl. Phys. 110, pp. 113508-1-8 (2011).

257. T. Nakamura, B. P. Tiwari, and S. Adachi
     Control of random lasing in ZnO/Al₂O₃ nanopowders
     Appl. Phys. Lett. 99, pp. 231105-1-3 (2011).

     2012

258. Y. K. Yu (ジョゲンガイ：博士学生) and S. Adachi
     Photoluminescence and Raman scattering spectra in (NH₄)₂XF₆:Mn⁴⁺ (X=Si, Ge, Sn, and Ti) red phosphor
     J. Electrochem. Soc. 159, pp. E11-E17 (2012).

259. S. Adachi, R. Kasa, and T. Arai
     Synthesis and properties of hetero-dialkaline hexafluorosilicate red phosphor KNaSiF₄:Mn⁴⁺
     J. Electrochem. Soc. 159, pp. J34-J37 (2012).

260. K. Kasa (笠　亮太：修士学生) and S. Adachi
     Red and deep red emissions from cubic K₂SiF₆:Mn⁴⁺ and hexagonal K₂MnF₆ synthesized in HF/KMnO₄/KHF₂/Si solutions
     J. Electrochem. Soc. 159, pp. J89-J95 (2012).

261. T. Nakamura, S. Adachi, M. Fujii, K. Miura, and S. Yamamoto
     Phosphorous and boron codoping of silicon nanocrystals by ion implantation: Photoluminescence properties
     Phys. Rev. B 85, pp. 045441-1-7 (2012).

262. Y. Kato (加藤優希：修士学生) and S. Adachi
     Fabrication and optical characterization of Si nanowires formed by catalytic chemical etching in Ag₂O/HF solution
     Appl. Surf. Sci. 258, pp. 5689-5697 (2012).

263. K. Firdaus (クルニアワン　フィルダウス：学部４年生), T. Nakamura, and S. Adachi
     Improved lasing characteristics of ZnO/organic-dye random laser
     Appl. Phys. Lett. 100, pp. 171101-1-4 (2012).

264. R. Kasa (笠　亮太：修士学生) and S. Adachi
     Mn-activated K₂ZrF₆ and Na₂ZrF₆ phosphors: Sharp red and oscillatory blue-green emissions
     J. Appl. Phys. 112, pp. 013506-1-6 (2012).

265. T. Nakamura and S. Adachi
     Photoluminescence decay dynamics of silver/porous-Si nanocomposites formed by metal-assisted etching
     J. Lumin. 132, pp. 3019-3026 (2012).

266. T. Arai (新井隆広：修士学生) and S. Adachi
     Photoluminescence properties of SnO₂・H₂O phosphor
     ECS J. Solid State Sci. Technol. 1, pp. R15-R21 (2012).

267. Y. Matsui (松井祐介：修士学生) and S. Adachi
     Optical properties of porous silicon layers formed by electroless photovoltaic etching
     ECS J. Solid State Sci. Technol. 1, pp. R80-R85 (2012).

268. T. Nakamura and S. Adachi
     Properties of magnetic nickel/porous-silicon composite powders
     AIP Adv. 2, pp. 032167-1-12 (2012).

269. T. Arai (新井隆広：修士学生) and S. Adachi
     Synthesis and photoluminescence properties of SnO₂ nanopowder
     Jpn. J. Appl. Phys. 51, pp. 105002-1-5 (2012).

270. Y. Tokida (時田祥紀：修士学生) and S. Adachi
     Photoluminescence spectroscopy and energy-level analysis of metal-organic-deposited Ga₂O₃:Cr³⁺ films
     J. Appl. Phys. 112, pp. 063522-1-9 (2012).

271. T. Nakamura, K. Firdaus, and S. Adachi
     Electron-hole plasma lasing in a ZnO random laser
     Phys. Rev. B 86, pp. 205103-1-7 (2012).

272. T. Nakamura, B. P. Tiwari, and S. Adachi
     Strongly modified spontaneous emission decay rate of silicon nanocrystals near semicontinuous gold films
     Opt. Express 20, pp. 26548-26558 (2012).

     2013

273. S. Adachi
     Optical properties of NaCl:Sn²⁺ phosphor synthesized from aqueous NaCl/SnCl₂/HCl solution
     ECS J. Solid State Sci. Technol. 2, pp. R9-R15 (2013).

274. J. Nara (奈良淳一：修士学生) and S. Adachi
     Photoluminescence properties of (Ce³⁺, Mn²⁺)-codoped CaCO₃ red phosphor
     J. Appl. Phys. 113, pp. 033519-1-9 (2013).

275. H. Tomioka (富岡大登：学部4年生) and S. Adachi
     Optical absorption, photoluminescence, and Raman scattering studies on Si nanowire arrays formed in Ag₂O₂SO₂O₄-HF-H₂O₂O solution
     ECS J. Solid State Sci. Technol. 2, pp. P253-P258 (2013).

276. Y. Matsui (松井祐介：修士学生) and S. Adachi
     Optical properties of “black silicon” formed by catalytic etching of Au/Si(100) wafers
     J. Appl. Phys. 113, pp. 173502-1-9 (2013).

277. D. Sekiguchi (関口大祐：学部4年生), J. Nara, and S. Adachi
     Photoluminescence and Raman scattering spectroscopies of BaSiF₆:Mn⁴⁺ red phosphor
     J. Appl. Phys. 113, pp. 183516-1-6 (2013).

278. J. Nara (奈良淳一：修士学生) and S. Adachi
     Efficient resonant energy transfer in (Ce³⁺, Tb³⁺)-codoped CaCO₃ green phosphor
     ECS J. Solid State Sci. Technol. 2, pp. R135-R141 (2013).

279. T. Arai (新井敬章：修士学生) and S. Adachi
     IR emission band and multiple-peak structure in photoluminescence spectra of SnO₂:Mn
     ECS J. Solid State Sci. Technol. 2, pp. R172-R177 (2013).

280. Y. Tokida (時田祥紀：修士学生) and S. Adachi
     Photoluminescent properties of Eu³⁺ in Ga₂O₃:Cr³⁺ films prepared by metal organic deposition
     Jpn. J. Appl. Phys. 52, pp. 101102-1-5 (2013).

281. R. Hoshino (星野良介：学部4年生) and S. Adachi
     Optical spectroscopy of ZnSiF₆・6H₂O:Mn⁴⁺ red phosphor
     J. Appl. Phys. 114, pp. 213502-1-6 (2013).

     2014

282. Y. Nagaoka (長岡佳宏：修士学生) and S. Adachi
     Photoluminescent properties of NaCl:Ce³⁺ phosphor synthesized using antisolvent crystallization
     J. Lumin. 145, pp. 797-802 (2014).

283. Y. Tosaka (登坂優希：学部4年生) and S. Adachi
     Effects of Ce concentration and temperature on photoluminescence intensity in KCl:Ce³⁺ blue phosphor
     ECS J. Solid State Sci. Technol. 3, pp. R14-R18 (2014).

284. T. Nakamura, S. Sonoda, and S. Adachi
     Plasmonic control of ZnO random lasing characteristics
     Laser Phys. Lett. 11, pp. 016004-1-5 (2014).

285. Y. Matsui (松井祐介：修士学生) and S. Adachi
     Synthesis and properties of “black silicon” formed by Pd-catalyst etching in NH₄HF₂/H₂O₂ solution
     ECS J. Solid State Sci. Technol. 3, pp. P48-P54 (2014).

286. Y. Nagaoka (長岡佳宏：修士学生) and S. Adachi
     High energy transfer efficiency in photoluminescence of (Ce³⁺, Tb³⁺)-codoped NaCl green phosphor
     ECS J. Solid State Sci. Technol. 3, pp. R43-R49 (2014).

287. D. Sekiguchi (関口大祐：修士学生) and S. Adachi
     Synthesis and optical properties of BaTiF₆:Mn⁴⁺ red phosphor
     ECS J. Solid State Sci. Technol. 3, pp. R60-R64 (2014).

288. T. Nakamura, T. Moriyama, N. Nabatova-Gabain, and S. Adachi
     Emission decay rate of a light emitter on thin metal films
     Jpn. J. Appl. Phys. 53, pp. 045201-1-5 (2014).

289. T. Arai (新井敬章：修士学生) and S. Adachi
     Simple wet chemical synthesis and photoluminescence characterization of SnO₂:Eu³⁺ reddish-orange phosphor
     J. Lumin. 153, pp. 46-53 (2014).

290. S. Adachi
     Photoluminescence properties and energy-level analysis of Ga₂O₃:Tb³⁺ green phosphor prepared by metal organic deposition
     ECS J. Solid State Sci. Technol. 3, pp. R100-R103 (2014).

291. T. Nakamura, Z. Yuan, and S. Adachi
     High-yield preparation of blue-emitting colloidal Si nanocrystals by selective laser ablation of porous silicon in liquid
     Nanotechnology 25, pp. 275602-1-7 (2014)

292. R. Hoshino (星野良介：修士学生) and S. Adachi
     Light-induced degradation in red-emitting ZnSiF₆-6H₂O:Mn⁴⁺ hydrate phosphor
     ECS J. Solid State Sci. Technol. 3, pp. R144-R149 (2014).

293. Y. Tosaka (登坂優希：修士学生) and S. Adachi
     Photoluminescence properties and energy-level diagrams in (Ce³⁺, Tb³⁺)-codoped KCl green phosphor
     J. Lumin. 156, pp. 157-163 (2014).

294. T. Arai (新井敬章：修士学生) and S. Adachi
     Difference in photoluminescence properties of SnO₂:Eu³⁺ redish-orange phosphors grown by sol-gel and chemical etching methods
     ECS J. Solid State Sci. Technol. 3, pp. R207-R211 (2014).

295. T. Nakamura, H. Fujiwara, R. Niyuki, K. Sasaki,Y. Ishikawa, N. Koshizaki, T. Tsuji, and S. Adachi
     Origin of lasing emission in a resonance-controlled ZnO random laser
     New J. Phys. 16, pp. 093054-1-11 (2014).

296. S. Adachi
     Unique light-induced degradation in yellow-emitting K₂SiF₆:Mn²⁺ phosphor
     J. Appl. Phys. 116, pp. 133515-1-7 (2014).

297. K. Sawada (澤田健士：学部4年生) and S. Adachi
     Photoluminescence properties of Eu³⁺ in Ga₂O₃-Tb₃Ga₅O₁₂:Cr³⁺ phosphor synthesized by metal organic deposition
     ECS J. Solid State Sci. Technol. 3, pp. R238-R244 (2014).

298. T. Nakamura, Z. Yuan, and S. Adachi
     Micronization of red-emitting K₂SiF₆:Mn⁴⁺ phosphor by pulsed laser irradiation in liquid
     Appl. Surf. Sci. 320, pp. 514-518 (2014).

     2015

299. D. Sekiguchi (関口大祐：修士学生) and S. Adachi
     Synthesis and photoluminescence spectroscopy of BaGeF₆:Mn⁴⁺ red phosphor
     Opt. Mater. 42, pp. 417-422 (2015).

300. R. Hoshino (星野良介：修士学生) and S. Adachi
     Optical spectroscopy and degradation behavior of ZnGeF₆?6H₂O:Mn⁴⁺ red-emitting phosphor
     J. Lumin. 162, pp. 63-71 (2015).

301. T. Nakamura, S. Adachi, M. Fujii, H. Sugimoto, K. Miura, and S. Yamamoto
     Size and dopant-concentration dependence of photoluminescence properties of ion-implanted phosphorous- and boron-codoped Si nanocrystals
     Phys. Rev. B 91, pp. 165424-1-8 (2015).

302. K. Sawada (澤田健士：学部4年生) and S. Adachi
     Photoluminescence and resonant energy transfer from Tb³⁺ to Eu³⁺ in Tb₃Ga₅O₁₂:Eu³⁺ garnet phosphor
     J. Lumin. 165, pp. 138-144 (2015).

303. Y. Nagaoka (長岡佳宏：修士学生) and S. Adachi
     Excitation energy transfer from Ce³⁺ to Sn²⁺ in NaCl phosphor
     ECS J. Solid State Sci. Technol. 4, pp. R119-R124 (2015).

304. T. Nakamura, S. Sonoda, T. Yamamoto, and S. Adachi
     Discrete-mode ZnO microparticle random laser
     Opt. Lett. 40, pp. 2661-2664 (2015).

305. T. Orihashi (折橋拓也：修士学生) and S. Adachi
     Synthesis condition and structural/luminescent properties of CaTiO₃:Eu³⁺ red phosphor
     J. Alloys Compd. 646, pp. 1116-1123 (2015).

306. R. Hoshino (星野良介：修士学生) and S. Adachi
     Photo-induced degradation and thermal decomposition in ZnSnF₆・6H₂O:Mn⁴⁺ red-emitting phosphor
     Opt. Mater. 48, pp. 36-43 (2015).

307. K. Sawada (澤田健士：修士学生) and S. Adachi
     Unique photoluminescence degradation/recovery phenomena in trivalent ion-activated phosphors
     J. Appl. Phys. 118, pp. 103106-1-9 (2015).

308. Y. Onishi (大西勇也：学部4年生) and S. Adachi
     Structural and luminescence properties of EuAlO₃ ternay compound and Al₂O₃-Eu₂O₃ compositions
     ECS J. Solid State Sci. Technol. 4, pp. R153-R158 (2015).

309. T. Nakamura, T. Yamamoto, and S. Adachi
     Temperature dependence of lasing characteristics of an irregular-shaped microparticle ZnO laser
     Opt. Express 23, pp. 28905-28913 (2015).

     2016

310. T. Nakamura, Z. Yuan, K. Watanabe, and S. Adachi
     Bright and multicolor luminescent colloidal Si nanocrystals prepared by pulsed laser irradiation in liquid
     Appl. Phys. Lett. 108, pp. 023105-1-5 (2016).

311. R. Hoshino (星野良介：修士学生), T. Nakamura, and S. Adachi
     Synthesis and photoluminescence properties of BaSnF₆:Mn⁴⁺ red phosphor
     ECS J. Solid State Sci. Technol. 5, pp. R37-R43 (2016).

312. K. Sawada (澤田健士：修士学生), T. Nakamura, and S. Adachi
     (Tb³⁺, Eu³⁺)-codoped Ga₂O₃ phosphors: Synthesis and photoluminescence properties
     J. Appl. Phys. 118, pp. 103106-1-9 (2016).

313. R. Hoshino (星野良介：修士学生), T. Nakamura, and S. Adachi
     Structural change induced by thermal annealing of red-light-emitting ZnSnF₆・6H₂O:Mn⁴⁺ hexahydrate phosphor
     Jpn. J. Appl. Phys. 55, pp. 052601-1-5 (2016).

314. Y. Onishi (大西勇也：学部4年生), T. Nakamura, and S. Adachi
     Solubility limit and luminescence properties of Eu³⁺ ions in Al₂O₃ powder
     J. Lumin. 176, pp. 266-271 (2016).

315. K. Sawada (澤田健士：修士学生), T. Nakamura, and S. Adachi
     Abnormal photoluminescence phenomena in (Tb³⁺, Eu³⁺) codoped Ga₂O₃ phosphor
     J. Appl. Phys. 118, pp. 103106-1-9 (2016).

316. T. Orihashi (折橋拓也：修士学生), T. Nakamura, and S. Adachi
     Synthesis and unique photoluminescence properties of Eu₂Ti₂O₇ and Eu₂TiO₅
     J. Am. Ceram. Soc. 99, pp. 3039-3046 (2016).

317. T. Orihashi (折橋拓也：修士学生), T. Nakamura, and S. Adachi
     Resonant energy transfer in (Eu³⁺, Bi³⁺)-codoped CaZrO₃ red-emitting phosphor
     RSC Adv. 6, pp. 66130-66139 (2016).

318. Y. Onishi (大西勇也：修士学生), T. Nakamura, and S. Adachi
     Tb³⁺ ion doping into Al₂O₃: Solubility limit and luminescence properties
     Jpn. J. Appl. Phys. 55, pp. 112401-1-6 (2016).

319. K. Sawada (澤田健士：修士学生), T. Nakamura, and S. Adachi
     Europium gallium garnet (Eu₃Ga₅O₁₂) and Eu₃GaO₆: Synthesis and material properties
     J. Appl. Phys. 120, pp. 143102-1-8 (2016).

320. S. Sakurai (櫻井翔之：修士学生), T. Nakamura, and S. Adachi
     Rb₂SiF₆:Mn⁴⁺ and Rb₂TiF₆:Mn⁴⁺ red-emitting phosphors
     ECS J. Solid State Sci. Technol. 5, pp. R206-R210 (2016).

     2017

321. Y. Onishi (大西勇也：修士学生), T. Nakamura, and S. Adachi
     Luminescence properties of Tb₃Al₅O₁₂ garnet and related compounds synthesized by the metal organic decomposition method
     J. Lumin. 183, pp. 193-200 (2017).

322. R. Hoshino (星野良介：修士学生), S. Sakurai, T. Nakamura, and S. Adachi
     Unique properties of ZnTiF₆・6H₂O:Mn⁴⁺ red-emitting hexahydrate phosphor
     J. Lumin. 184, pp. 160-168 (2017).

323. Z. Yuan (袁　澤：博士学生, 筑波大学), T. Nakamura, S. Adachi, and K. Matsuishi
     Luminescence color control and quantum-efficiency enhancement of colloidal Si nanocrystals by pulsed laser irradiation in liquid
     Nanoscale 9, pp. 1193-1200 (2017).

324. Y. Onishi (大西勇也：修士学生), T. Nakamura, and S. Adachi
     Photoluminescence properties of Tb₃Al₅O₁₂:Ce³⁺ garnet synthesized by the metal organic decomposition method
     Opt. Mater. 64, pp. 557-563 (2017).

325. Z. Yuan (袁　澤：博士学生, 筑波大学), T. Nakamura, S. Adachi, and K. Matsuishi
     Improvement of laser processing for colloidal silicon nanocrystal formation in a reactive solvent
     J. Phys. Chem. C 121, pp. 8623-8629 (2017).

326. K. Sawada (澤田健士：修士学生), T. Nakamura, and S. Adachi
     An orange-light emitting garnet phosphor: Tb₃Ga₅O₁₂:Eu³⁺
     ECS J. Solid State Sci. Technol. 6, pp. R97-R104 (2017).

327. K. Sawada (澤田健士：修士学生), T. Nakamura, and S. Adachi
     Ca₃Ga₂Ge₃O₁₂:Tb³⁺ garnet phosphor: Synthesis and properties
     Ceram. Int. 43, pp. 14225-14232 (2017).

328. Y. Onishi (大西勇也：修士学生), T. Nakamura, and S. Adachi
     Yellow-light emitting Tb₃Al₅O₁₂:Ce³⁺ phosphor properties sensitized by Bi³⁺ ions
     J. Lumin. 192, pp. 720-727 (2017).

     2018

329. S. Sakurai (櫻井翔之：修士学生), T. Nakamura, and S. Adachi
     Synthesis and properties of Rb₂GeF₆:Mn⁴⁺ red-emitting phosphor
     Jpn. J. Appl. Phys. 57, pp. 022601-1-6 (2018).

330. S. Adachi
     Photoluminescence spectra and modeling analyses of Mn⁴⁺-activated fluoride phosphors: A review
     J. Lumin. 197, pp. 119-130 (2018).

331. Y. Onishi (大西勇也：修士学生), T. Nakamura, H. Sone, and S. Adachi
     Synthesis and properties of Tb₃Al₅O₁₂:Eu³⁺ garnet phosphor
     J. Lumin. 197, pp. 242-247 (2018).

332. S. Adachi
     Photoluminescence properties of Mn⁴⁺-activated oxide phosphors for use in white-LED applications: A review
     J. Lumin. 202, pp. 263-281 (2018).

333. Y. Onishi (大西勇也：修士学生), T. Nakamura, H. Sone, and S. Adachi
     Luminescence properties of Eu³⁺-activated TbAlO₃ perovskite compound synthesized by metal organic decomposition
     Jpn. J. Appl. Phys. 57, pp. 082601-1-6 (2018).

     2019

334. S. Adachi
     Photoluminescence spectroscopy and crystal-field parameters of Cr³⁺ ion in red and deep red-emitting phosphors
     ECS J. Solid State Sci. Technol. 8, pp. R164-R168 (2019).
     ここをクリック [米国電気化学会 (英国物理学会)−出版元]

335. S. Adachi
     Review − Tanabe−Sugano energy-level diagram and Racah parameters in Mn⁴⁺-activated red and deep red-emitting phosphors
     ECS J. Solid State Sci. Technol. 8, pp. R183-R196 (2019).
     ここをクリック [米国電気化学会 (英国物理学会)−出版元)]

     2020

336. S. Adachi
     Review − Mn⁴⁺-activated red and deep red-emitting phosphors
     ECS J. Solid State Sci. Technol. 9, pp. 016001-1-34 (2020).
     ここをクリック (PDF論文)
     ここをクリック [米国電気化学会 (英国物理学会)−出版元]

337. S. Adachi
     Crystal-field and Racah parameters of Mn⁴⁺ ion in red and deep red-emitting phosphors: Fluoride versus oxide phosphor
     J. Lumin. 218, pp. 116829-1-9 (2020).
     ここをクリック (Elsevier社−出版元)

338. S. Adachi
     Review − Mn⁴⁺ vs Cr³⁺: A comparative study as activator ions in red and deep red-emitting phosphors
     ECS J. Solid State Sci. Technol. 9, pp. 026003-1-11 (2020).
     ここをクリック [米国電気化学会 (英国物理学会)−出版元]

339. S. Adachi
     Mn⁴⁺ and Cr³⁺ ions in red and deep red-emitting phosphors: Spectroscopic analysis and Racah parameter determination
     J. Lumin. 223, pp. 117217-1-8 (2020).
     ここをクリック (Elsevier社−出版元)

340. S. Adachi
     New analysis model for the determination of Racah and crystal- field splitting parameters: Verification and case studies
     ECS J. Solid State Sci. Technol. 9, pp. 046004-1-8 (2020).
     ここをクリック [米国電気化学会 (英国物理学会)−出版元]

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